switching diode emn11 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) ultra high speed switching ? features 1) ultra small mold type. (emd6) 2) high reliability. ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ?absolute maximum ratings (ta=25c) symbol unit v rm v v r v i fm ma io ma i surge a pd mw/total * tj c tstg c *pd=120mw when only 1 circuit is operating. condition=each terminal mounted on a recommended land pattern.(0.35x0.9mm) ?electrical characteristics (ta=25c) symbol min. typ. max. unit v f - - 1.2 v i f =100ma i r - - 0.1 a v r =70v ct - - 3.5 pf v r =6v , f=1mhz trr - - 4 ns v r =6v , i f =5ma , rl=50? forward voltage reverse current capacitance between terminals reverse recovery time storage temperature ? 55 to ? 150 parameter conditions power dissipation 150 junction temperature 150 average rectified forward current (single) 100 surge current (t=1us) (single) 4 reverse voltage (dc) 80 forward voltage (single) 300 parameter limits reverse voltage (repetitive peak) 80 emd6 0.4 0.45 0.25 0.15 1.0 0.5 0.5 0.25 0.15 0.3 1.55 1.650.1 4.00.1 4.00.1 2.00.05 1.50.1 0 3.50.05 1.750.1 8.00.2 0.80.1 5.50.2 1.650.1 0.650.1 0.30.1 00.1 1pin 1.650.01 rohm : emd6 jeita : sc-75a size dot (year week factory) 0.130.05 0.50.05 00.1 (1) (5) (3) (6) (2) (4) 0.5 0.5 1.00.1 0.220.05 1.60.1 1.20.1 1.60.1 1/2 2011.06 - rev.b data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
emn11 0 1 2 3 4 5 6 7 8 9 10 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 ave:1.040pf forward voltagevf(mv) vf-if characteristics forward current:if(ma) reverse current:ir(na) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(na) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(ms) rth-t characteristics transient thaermal impedance:rth (/w) trr dispersion map reverse recovery time:trr(ns) electrostatic ddischarge test esd(kv) esd dispersion map 0.1 1 10 100 0 100 200 300 400 500 600 700 800 900 1000 ta=-25 ta=125 ta=75 ta=25 ta=150 0.01 0.1 1 10 100 1000 10000 0 1020304050607080 ta=125 ta=-25 ta=25 ta=75 ta=150 900 910 920 930 940 950 ave:921.7m ta=25 if=100ma n=30pcs 0 10 20 30 40 50 60 70 80 90 100 ta=25 vr=80v n=10pcs ave:9.655na ta=25 vr=6v f=1mhz n=10pcs 0 5 10 15 20 ave:3.50a 8.3ms ifsm 1cyc ave:1.93ns ta=25 vr=6v if=5ma rl=50 n=10pcs 0 1 2 3 4 5 11 01 0 0 8.3ms ifsm 1cyc 8.3ms 1 10 100 0.1 1 10 100 t ifsm 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 1ms im=10ma if=100ma 300us time mounted on epoxy board rth(j-c) rth(j-a) 0 1 2 3 4 5 6 7 8 9 10 c=100pf r=1.5k c=200pf r=0 ave:0.97kv ave:2.54kv 0.1 1 10 0 5 10 15 20 f=1mhz 2/2 2011.06 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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